APTGT75DA120T1G Microsemi Power Products Group, APTGT75DA120T1G Datasheet - Page 5

• Manufacturer Part Number: APTGT75DA120T1G
• Description: IGBT 1200V 110A 357W SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT75DA120T1G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 75A
• Current - Collector (ic) (max): 110A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 5.34nF @ 25V
• Power - Max: 357W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.5
0.4
0.3
0.2
0.1
60
50
40
30
20
10
0.00001
0
0
0
Operating Frequency vs Collector Current
switching
0.05
0.9
0.7
0.5
0.3
0.1
Hard
20
ZCS
ZVS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
40
0.0001
I
C
60
(A)
V
D=50%
R
T
T
80
J
c
CE
G
=125°C
=75°C
=4.7Ω
=600V
100
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
120
Single Pulse
0.01
APTGT75DA120T1G
200
175
150
125
100
75
50
25
0
0
Forward Characteristic of diode
0.1
0.4
T
J
=125°C
0.8
V
1.2
F
(V)
T
1
J
=25°C
Diode
1.6
T
J
2
=125°C
2.4
10
5 – 5