APTGT100DA120T1G Microsemi Power Products Group, APTGT100DA120T1G Datasheet - Page 4

• Manufacturer Part Number: APTGT100DA120T1G
• Description: IGBT 1200V 140A 480W SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT100DA120T1G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 140A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 7.2nF @ 25V
• Power - Max: 480W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
200
150
100
200
175
150
125
100
25
20
15
10
0.25
0.15
0.05
Switching Energy Losses vs Gate Resistance
50
75
50
25
0.3
0.2
0.1
5
0
0
0
0.00001
0
0
0
5
V
T
V
I
CE
C
J
GE
0.9
Output Characteristics (V
= 125°C
0.7
0.5
= 100A
0.3
0.1
T
= 600V
0.05
6
=15V
J
=125°C
Transfert Characteristics
5
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
T
7
J
=25°C
10
0.0001
V
8
V
CE
GE
2
(V)
T
(V)
J
=25°C
9
15
T
10
GE
J
=125°C
T
3
=15V)
J
20
=125°C
rectangular Pulse Duration (Seconds)
Eon
0.001
Eoff
11
Er
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Single Pulse
25
12
4
IGBT
0.01
APTGT100DA120T1G
240
200
160
120
200
150
100
25
20
15
10
80
40
50
5
0
0
0
0
0
0
V
V
R
T
V
T
R
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
J
CE
GE
G
GE
J
T
G
= 125°C
25
0.1
=125°C
= 3.9 Ω
=3.9 Ω
J
= 600V
= 15V
=15V
Eon
= 125°C
300
50
1
Output Characteristics
75 100 125 150 175 200
V
600
GE
=17V
V
V
CE
I
CE
2
C
(V)
1
(A)
900
(V)
V
GE
1200
3
=15V
V
GE
V
Eon
GE
=13V
=9V
Eoff
Er
1500
10
4
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