APTGT100DA120T1G Microsemi Power Products Group, APTGT100DA120T1G Datasheet - Page 5

• Manufacturer Part Number: APTGT100DA120T1G
• Description: IGBT 1200V 140A 480W SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT100DA120T1G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 140A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 7.2nF @ 25V
• Power - Max: 480W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
60
50
40
30
20
10
0.5
0.4
0.3
0.2
0.1
0.00001
0
0
0
Operating Frequency vs Collector Current
switching
Hard
0.9
0.05
0.7
0.5
0.1
ZCS
0.3
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
40
ZVS
0.0001
60
I
C
(A)
80
V
D=50%
R
T
Tc=75°C
J
CE
G
=125°C
100
=3.9 Ω
=600V
0.001
120
rectangular Pulse Duration (Seconds)
www.microsemi.com
140
Single Pulse
0.01
APTGT100DA120T1G
200
150
100
50
0
0
Forward Characteristic of diode
0.1
0.4
T
J
=125°C
0.8
1.2
V
F
(V)
1
T
J
=25°C
1.6
Diode
T
J
=125°C
2
2.4
10
5 – 5