APTGT35H120T3G Microsemi Power Products Group, APTGT35H120T3G Datasheet
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APTGT35H120T3G
Specifications of APTGT35H120T3G
Related parts for APTGT35H120T3G
APTGT35H120T3G Summary of contents
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... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT35H120T3G ® Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies 11 • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT35H120T3G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25° 15V ...
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... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP3 Package outline (dimensions in mm See application note 1901 - Mounting Instructions for SP3 Power Modules on APTGT35H120T3G R T: Thermistor temperature 25 Thermistor value at T T − ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.1 0.05 0 0.00001 0.0001 APTGT35H120T3G =15V =125° 2.5 3 3.5 Energy losses vs Collector Current 600V CE =25° ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT35H120T3G Forward Characteristic of diode 80 ...