APTGT35H120T3G Microsemi Power Products Group, APTGT35H120T3G Datasheet - Page 5

• Manufacturer Part Number: APTGT35H120T3G
• Description: IGBT MOD TRENCH FULL BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT35H120T3G

• Igbt Type: Trench and Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 35A
• Current - Collector (ic) (max): 55A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.5nF @ 25V
• Power - Max: 208W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
80
60
40
20
1.4
1.2
0.8
0.6
0.4
0.2
0.00001
0
1
0
0
Operating Frequency vs Collector Current
switching
0.05
0.9
ZCS
0.7
0.5
0.3
0.1
hard
10
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZVS
20
0.0001
I
C
30
(A)
40
V
D=50%
R
T
T
CE
G
J
C
=125°C
=75°C
=27Ω
=600V
0.001
50
rectangular Pulse Duration (Seconds)
Single Pulse
www.microsemi.com
60
Diode
0.01
80
70
60
50
40
30
20
10
0
APTGT35H120T3G
0
Forward Characteristic of diode
0.1
0.5
T
J
=125°C
1
V
1.5
F
(V)
1
T
J
2
=25°C
2.5
10
3
5 - 5