APTGF100A120T3WG Microsemi Power Products Group, APTGF100A120T3WG Datasheet - Page 3

• Manufacturer Part Number: APTGF100A120T3WG
• Description: IGBT NPT PHASE 1200V 130A SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF100A120T3WG

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 100A
• Current - Collector (ic) (max): 130A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 6.5nF @ 25V
• Power - Max: 657W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal and package characteristics
Temperature sensor NTC
Symbol Characteristic
Torque
Symbol
∆R
SP3 Package outline
V
R
T
∆B/B
B
Wt
T
T
ISOL
R
thJC
STG
25
25/85
C
J
25
/R
25
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Characteristic
Resistance @ 25°C
T
25
= 298.15 K
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
28
(dimensions in mm)
1
R
T
=
exp
(see application note APT0406 on www.microsemi.com for more information).
⎡
⎢
⎣
B
25
/
85
R
⎛
⎜ ⎜
⎝
25
T
1
25
−
www.microsemi.com
T
1
⎞
⎟ ⎟
⎠
⎤
⎥
⎦
T: Thermistor temperature
R
T
: Thermistor value at T
To heatsink
17
12
APTGF100A120T3WG
T
C
=100°C
Diode
IGBT
M4
2500
Min
Min
-40
-40
-40
2.5
3952
Typ
Typ
50
5
4
Max
0.19
0.90
Max
150
125
100
110
4.7
°C/W
Unit
Unit
N.m
kΩ
°C
%
%
K
V
g
3 - 5