APTGF100A120T3WG Microsemi Power Products Group, APTGF100A120T3WG Datasheet - Page 4

• Manufacturer Part Number: APTGF100A120T3WG
• Description: IGBT NPT PHASE 1200V 130A SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF100A120T3WG

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 100A
• Current - Collector (ic) (max): 130A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 6.5nF @ 25V
• Power - Max: 657W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
200
175
150
125
100
200
175
150
125
100
40
35
30
25
20
15
10
0.16
0.12
0.08
0.04
75
50
25
Switching Energy Losses vs Gate Resistance
75
50
25
5
0
0.2
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
GE
J
= 100A
Output Characteristics (V
= 125°C
0.05
0.7
0.3
0.1
0.9
0.5
= 600V
=15V
6
1
10
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
2
20
0.0001
V
8
T
V
T
CE
J
GE
=125°C
J
3
=25°C
(V)
(V)
T
9
30
J
=125°C
T
J
=25°C
Eoff
4
10
Eon
GE
=15V)
40
www.microsemi.com
rectangular Pulse Duration (Seconds)
0.001
5
11
Single Pulse
50
12
6
0.01
APTGF100A120T3WG
250
200
150
100
35
30
25
20
15
10
200
175
150
125
100
50
5
0
75
50
25
0
0
0
0
0
V
V
R
T
V
T
R
T
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
J
CE
GE
G
GE
J
G
J
= 125°C
25
=125°C
= 5.6 Ω
=5.6 Ω
0.1
= 125°C
= 600V
= 15V
=15V
300
1
50
Output Characteristics
75 100 125 150 175 200
2
600
I
C
V
(A)
CE
V
V
GE
3
CE
(V)
=20V
900
1
(V)
4
Eon
IGBT
1200
V
V
GE
V
GE
5
GE
Eoff
=15V
=9V
=12V
1500
10
6
4 - 5