APTGT75X60T3G Microsemi Power Products Group, APTGT75X60T3G Datasheet

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APTGT75X60T3G

Manufacturer Part Number
APTGT75X60T3G
Description
IGBT MOD TRENCH 3PH BRIDGE SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT75X60T3G.pdf (5 pages)

Specifications of APTGT75X60T3G

Igbt Type
Trench and Field Stop
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 75A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.62nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
It is recommended to connect a decoupling capacitor
between pins 31 & 2 to reduce switching overvoltages, if DC
Power is connected between pins 15, 16 & 12.
Pins 15 & 16 must be shorted together.
* Specification of IGBT device but output current must be limited to 40A at Tc=80°C and 65A at Tc=25°C not to
exceed a connectors temperature greater than 120°C.
RBSOA
Symbol
V
V
I
P
15
16
19
20
11
10
12
I
CM
CES
GE
C
D
Trench + Field Stop IGBT
29
30
31
32
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
28 27 26
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
2
3 Phase bridge
Power Module
3
18
25
4
23
25
8
7
23 22
7
8
22
20
29
30
4
3
10
19
Parameter
11 12
18
16
15
14
13
www.microsemi.com
®
28
31
2
R1
14
13
Application
Features
Benefits
•
•
•
•
•
•
•
•
•
•
•
•
T
T
T
T
T
C
C
C
C
J
Motor control
Trench + Field Stop IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
RoHS compliant
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
V
I
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
APTGT75X60T3G
C
CES
= 75A* @ Tc = 80°C
= 600V
150A @ 550V
Max ratings
100*
600
150
±20
250
75*
®
Technology
Unit
W
V
A
V
1 - 5

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APTGT75X60T3G Summary of contents

Page 1

... Benefits Parameter www.microsemi.com APTGT75X60T3G V = 600V CES I = 75A 80°C C • Motor control ® • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT75X60T3G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 75A T = 150°C C ...

Page 3

... R : Thermistor value     − B       heatsink 17 12 www.microsemi.com APTGT75X60T3G Min Typ Max 50 3952 Min Typ Max IGBT 0.6 Diode 1.42 2500 -40 175 -40 125 -40 100 M4 2.5 4.7 110 Unit kΩ K Unit ° ...

Page 4

... J T =25°C J 1 =25° =25° (V) GE Eoff Eon IGBT Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT75X60T3G Output Characteristics 150 V =19V T = 150° 125 V =13V 100 GE V =15V = 0.5 1 1 (V) CE Energy losses vs Collector Current 300V CE Eoff ...

Page 5

... U.S and Foreign patents pending. All Rights Reserved. V =300V CE D=50% R =4.7Ω =150° =85° 100 I (A) C Diode Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT75X60T3G Forward Characteristic of diode 100 =125° =150° =25° 0.4 0.8 1.2 1 ( ...

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