APTGT75X60T3G Microsemi Power Products Group, APTGT75X60T3G Datasheet - Page 5

• Manufacturer Part Number: APTGT75X60T3G
• Description: IGBT MOD TRENCH 3PH BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT75X60T3G

• Igbt Type: Trench and Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 75A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4.62nF @ 25V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
1.6
1.4
1.2
0.8
0.6
0.4
0.2
70
60
50
40
30
20
10
0.00001
0
1
0
0
Operating Frequency vs Collector Current
0.5
0.3
switching
0.9
0.1
0.7
0.05
Hard
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
20
0.0001
40
I
C
(A)
60
V
D=50%
R
T
T
J
c
CE
G
=150°C
=85°C
=4.7Ω
=300V
80
Rectangular Pulse Duration in Seconds
0.001
www.microsemi.com
Single Pulse
100
Diode
0.01
100
75
50
25
0
0
0.1
APTGT75X60T3G
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
1.6
=25°C
2
10
2.4
5 - 5