APTGL60TL120T3G Microsemi Power Products Group, APTGL60TL120T3G Datasheet - Page 5

• Manufacturer Part Number: APTGL60TL120T3G
• Description: POWER MODULE IGBT 1200V 60A SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGL60TL120T3G

• Igbt Type: Trench and Field Stop
• Configuration: Three Level Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 2.77nF @ 25V
• Power - Max: 280W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGL60TL120T3GMI; APTGL60TL120T3GMI

100
100
12
10
0.6
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
80
60
40
20
0.00001
80
60
40
20
8
6
4
2
0
0
0
0
5
0
0.3
0.1
0.05
0.9
0.7
0.5
Output Characteristics (V
6
T
Transfert Characteristics
J
Gate Resistance (ohms)
=150°C
10
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
1
0.0001
Eon
8
T
Eoff
J
=25°C
V
V
CE
GE
20
9
2
(V)
(V)
T
J
10
=25°C
T
V
T
GE
30
11
V
J
CE
I
J
=150°C
GE
C
3
= 150°C
=15V)
rectangular Pulse Duration (Seconds)
0.001
= 50A
= 600V
=15V
12
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Single Pulse
13
40
4
0.01
100
120
100
20
16
12
80
60
40
20
80
60
40
20
8
4
0
0
0
APTGL60TL120T3G
0
0
0
V
V
R
T
V
T
R
Energy losses vs Collector Current
CE
GE
J
Reverse Bias Safe Operating Area
G
T
GE
J
0.1
= 150°C
G
=150°C
= 8.2 Ω
=8.2 Ω
J
= 600V
= 15V
Eoff
=15V
= 150°C
20
300
Output Characteristics
1
600
40
V
V
I
C
V
GE
CE
(A)
2
CE
=19V
1
(V)
900
(V)
60
Eon
V
1200
GE
3
80
=15V
V
GE
=9V
1500
10
100
4
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