APTGL60TL120T3G Microsemi Power Products Group, APTGL60TL120T3G Datasheet - Page 6

• Manufacturer Part Number: APTGL60TL120T3G
• Description: POWER MODULE IGBT 1200V 60A SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGL60TL120T3G

• Igbt Type: Trench and Field Stop
• Configuration: Three Level Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 2.77nF @ 25V
• Power - Max: 280W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGL60TL120T3GMI; APTGL60TL120T3GMI

Microsemi reserves the right to change, without notice, the specifications and information contained herein
CR1 to CR6 Typical performance curve
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
1.4
1.2
0.8
0.6
0.4
0.2
2.5
1.5
0.5
80
60
40
20
0.00001
0
1
0
2
1
0
0.0
0
Forward Current vs Forward Voltage
Energy losses vs Collector Current
V
0.05
0.7
0.9
0.3
0.5
0.1
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
F
, Anode to Cathode Voltage (V)
1.0
20
0.0001
I
T
C
J
2.0
=125°C
(A)
40
T
J
V
V
R
T
=25°C
CE
GE
J
G
= 125°C
3.0
= 5Ω
60
= 800V
= 15V
0.001
Rectangular Pulse Duration (Seconds)
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4.0
80
Single Pulse
0.01
1.8
1.6
1.4
1.2
0.8
0.6
APTGL60TL120T3G
Switching Energy Losses vs Gate Resistance
1
0
V
V
I
T
C
J
CE
GE
0.1
= 30A
= 125°C
= 800V
=15V
Gate resistance (ohms)
10
1
20
10
30
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