APTGV25H120BG Microsemi Power Products Group, APTGV25H120BG Datasheet - Page 10

• Manufacturer Part Number: APTGV25H120BG
• Description: IGBT NPT BST CHOP FULL BRDG SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGV25H120BG

• Igbt Type: NPT, Trench and Field Stop
• Configuration: Boost Chopper, Full Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 25A
• Current - Collector (ic) (max): 40A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.8nF @ 25V
• Power - Max: 156W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

160
120
75
70
65
60
55
50
80
40
10
5
4
3
2
1
0
0
8
6
4
2
0
Switching Energy Losses vs Gate Resistance
0
5
5
5
Turn-On Delay Time vs Collector Current
V
V
T
V
R
Turn-On Energy Loss vs Collector Current
CE
Current Rise Time vs Collector Current
V
R
V
R
GE
J
CE
G
= 125°C
CE
G
CE
G
= 22Ω
= 600V
I
I
= 600V
= 15V
CE
I
CE
10
= 22Ω
= 22Ω
CE
= 600V
= 600V
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
15
15
, Collector to Emitter Current (A)
15
Gate Resistance (Ohms)
20
25
25
25
V
30
GE
=15V
Eoff, 25A
Eon, 25A
35
35
35
T
V
J
=125°C,
GE
40
V
=15V
GE
T
V
= 15V
J
GE
=25°C,
45
45
45
=15V
50
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55
60
55
55
400
350
300
250
200
60
50
40
30
20
10
50
45
40
35
30
25
20
0
4
3
2
1
0
0
APTGV25H120BG
5
5
5
Turn-Off Energy Loss vs Collector Current
Turn-Off Delay Time vs Collector Current
V
R
Current Fall Time vs Collector Current
V
CE
G
Reverse Bias Safe Operating Area
V
CE
I
V
I
I
R
= 22Ω
CE
CE
CE
CE
= 600V
GE
G
, Collector to Emitter Voltage (V)
T
T
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
J
J
= 600V
15
15
= 22Ω
15
= 15V
= 25°C
V
= 125°C
CE
400
= 600V, V
25
25
25
GE
= 15V, R
800
35
35
35
T
J
= 125°C
V
T
G
GE
J
T
=25°C
= 22Ω
V
T
=15V,
J
GE
J
=125°C
= 25°C
45
=15V,
45
45
1200
55
55
55
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