APTGV25H120BG Microsemi Power Products Group, APTGV25H120BG Datasheet - Page 9

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APTGV25H120BG

Manufacturer Part Number
APTGV25H120BG
Description
IGBT NPT BST CHOP FULL BRDG SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGV25H120BG

Igbt Type
NPT, Trench and Field Stop
Configuration
Boost Chopper, Full Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 25A
Current - Collector (ic) (max)
40A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.8nF @ 25V
Power - Max
156W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
7. Full bridge bottom switches curves
7.1 Bottom fast NPT IGBT typical performance curves
120
100
80
70
60
50
40
30
20
10
80
60
40
20
0
0
9
8
7
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
0
0
9
T
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
250µs Pulse Test
< 0.5% Duty cycle
J
250µs Pulse Test
< 0.5% Duty cycle
25
Breakdown Voltage vs Junction Temp.
V
= 125°C
1
CE
V
10
2.5
GE
, Collector to Emitter Voltage (V)
Output characteristics (V
V
T
, Gate to Emitter Voltage (V)
GE
J
2
, Junction Temperature (°C)
, Gate to Emitter Voltage (V)
Transfer Characteristics
11
50
5
3
T
J
=125°C
12
7.5
4
75
T
J
13
=25°C
5
10
T
14
J
GE
=25°C
T
100
6
J
=15V)
=125°C
Ic=12.5A
Ic=50A
Ic=25A
12.5
15
7
www.microsemi.com
125
15
16
8
20
16
12
50
40
30
20
10
18
16
14
12
10
8
4
0
6
5
4
3
2
1
0
0
8
6
4
2
0
25
25
0
APTGV25H120BG
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
I
T
C
J
V
= 25A
= 25°C
CE
0.5
Output Characteristics (V
, Collector to Emitter Voltage (V)
30
T
50
J
, Junction Temperature (°C)
T
50
C
, Case Temperature (°C)
1
Gate Charge (nC)
60
Gate Charge
75
1.5
75
90
V
CE
2
100
=600V
250µs Pulse Test
< 0.5% Duty cycle
V
GE
120
T
= 15V
V
J
2.5
=25°C
GE
CE
100
=240V
=10V)
T
Ic=12.5A
V
J
125
Ic=50A
=125°C
CE
Ic=25A
150
=960V
3
3.5
125
180
150
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