APTGT150SK120G Microsemi Power Products Group, APTGT150SK120G Datasheet
APTGT150SK120G
Specifications of APTGT150SK120G
Related parts for APTGT150SK120G
APTGT150SK120G Summary of contents
Page 1
... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT150SK120G ® Application • AC and DC motor control • Switched Mode Power Supplies Features • ...
Page 2
... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT150SK120G = 25°C unless otherwise specified j Test Conditions 1200V 25° 15V 150A T = 125°C C ...
Page 3
... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT150SK120G Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...
Page 4
... Eon Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.1 0.04 0.05 0 0.00001 0.0001 APTGT150SK120G =15V) GE 300 T 250 T =125°C J 200 150 100 Energy losses vs Collector Current =25° ...
Page 5
... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT150SK120G Forward Characteristic of diode 300 ...