APTGT150SK120G Microsemi Power Products Group, APTGT150SK120G Datasheet - Page 5

• Manufacturer Part Number: APTGT150SK120G
• Description: IGBT 1200V 220A 690W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT150SK120G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 150A
• Current - Collector (ic) (max): 220A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 10.7nF @ 25V
• Power - Max: 690W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
60
50
40
30
20
10
0.35
0.25
0.15
0.05
0
0.3
0.2
0.1
0.00001
0
Operating Frequency vs Collector Current
0
switching
Hard
0.05
0.9
0.7
0.5
0.3
0.1
ZCS
40
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZVS
80
0.0001
I
120
C
(A)
V
D=50%
R
T
T
160
CE
J
c
G
=125°C
=75°C
=2.2Ω
=600V
200
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
240
Single Pulse
0.01
300
250
200
150
100
50
0
APTGT150SK120G
0
Forward Characteristic of diode
0.1
0.4
T
J
=125°C
0.8
V
1.2
F
(V)
T
1
J
=25°C
Diode
1.6
T
J
2
=125°C
2.4
10
5 - 5