APTGT300SK120G Microsemi Power Products Group, APTGT300SK120G Datasheet - Page 4

• Manufacturer Part Number: APTGT300SK120G
• Description: IGBT 1200V 420A 1380W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT300SK120G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 300A
• Current - Collector (ic) (max): 420A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 21nF @ 25V
• Power - Max: 1380W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
600
500
400
300
200
100
600
500
400
300
200
100
70
60
50
40
30
20
10
0.08
0.06
0.04
0.02
Switching Energy Losses vs Gate Resistance
0
0.1
0
0.00001
0
0
0
0
5
V
T
V
I
CE
C
J
GE
0.9
Output Characteristics (V
= 300A
= 125°C
0.7
0.5
0.3
0.1
T
= 600V
=15V
0.05
J
6
2
=125°C
Transfert Characteristics
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
T
J
7
=25°C
4
0.0001
8
V
V
CE
GE
6
2
(V)
T
(V)
J
=25°C
9
Eon
8
T
10
GE
J
=125°C
T
3
J
=15V)
=125°C
rectangular Pulse Duration (Seconds)
Eoff
0.001
10
Er
11
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Single Pulse
12
12
4
0.01
700
600
500
400
300
200
100
600
500
400
300
200
100
62.5
37.5
12.5
APTGT300SK120G
0
0
75
50
25
0
0
0
0
V
T
R
Reverse Bias Safe Operating Area
Energy losses vs Collector Current
V
V
R
T
GE
J
T
G
0.1
=125°C
J
=1.8 Ω
CE
GE
G
J
=15V
= 125°C
= 1.8Ω
= 125°C
100
300
= 600V
= 15V
Eon
1
Output Characteristics
200
V
600
GE
=17V
V
V
CE
300
CE
2
I
C
(V)
1
900
(V)
(A)
400
IGBT
V
GE
1200
3
=15V
V
500
Eon
GE
V
GE
=13V
Eoff
=9V
Er
1500
10
600
4
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