APTGT300SK120G Microsemi Power Products Group, APTGT300SK120G Datasheet - Page 5

• Manufacturer Part Number: APTGT300SK120G
• Description: IGBT 1200V 420A 1380W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT300SK120G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 300A
• Current - Collector (ic) (max): 420A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 21nF @ 25V
• Power - Max: 1380W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
60
50
40
30
20
10
0.16
0.12
0.08
0.04
0
0.2
0.00001
0
0
Operating Frequency vs Collector Current
switching
Hard
50
0.05
0.9
0.7
0.5
0.1
0.3
ZCS
100 150 200 250 300 350 400
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZVS
0.0001
I
C
(A)
V
D=50%
R
T
Tc=75°C
CE
J
G
=125°C
=1.8Ω
=600V
0.001
rectangular Pulse Duration (Seconds)
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Single Pulse
0.01
600
500
400
300
200
100
APTGT300SK120G
0
0
Forward Characteristic of diode
0.1
0.4
T
J
=125°C
0.8
1.2
V
F
(V)
1
T
J
=25°C
1.6
Diode
T
J
=125°C
2
2.4
10
5 - 5