APTGT400A120D3G Microsemi Power Products Group, APTGT400A120D3G Datasheet - Page 4

• Manufacturer Part Number: APTGT400A120D3G
• Description: IGBT MOD TRENCH PHASE LEG D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT400A120D3G

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 400A
• Current - Collector (ic) (max): 580A
• Current - Collector Cutoff (max): 750µA
• Input Capacitance (cies) @ Vce: 29nF @ 25V
• Power - Max: 2100W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
800
600
400
200
800
600
400
200
150
125
100
0.07
0.06
0.05
0.04
0.03
0.02
0.01
Switching Energy Losses vs Gate Resistance
75
50
25
0
0
0.00001
0
0
5
0
0
T
J
0.3
Output Characteristics (V
V
0.5
T
=125°C
0.9
0.7
0.1
V
0.05
I
CE
C
J
6
GE
Eoff
= 125°C
= 400A
Transfert Characteristics
= 600V
=15V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
3
T
7
J
=25°C
T
0.0001
J
=25°C
8
V
V
GE
CE
2
6
(V)
(V)
9
T
10
GE
J
=125°C
9
IGBT
3
=15V)
Eon
rectangular Pulse Duration (Seconds)
0.001
11
Err
12
12
4
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Single Pulse
0.01
800
600
400
200
1000
120
100
800
600
400
200
APTGT400A120D3G
80
60
40
20
0
0
0
0
0
0
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
V
T
R
T
V
T
R
V
0.1
GE
J
G
J
CE
J
=125°C
GE
G
=1.8 Ω
= 125°C
= 125°C
=15V
= 1.8 Ω
= 600V
= 15V
300
200
1
Output Characteristics
V
GE
600
Eon
=17V
I
V
C
V
400
CE
2
(A)
CE
(V)
1
(V)
900
Eoff
V
GE
600
3
=15V
1200
V
V
Eon
GE
GE
=13V
=9V
Err
1500
800
10
4
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