APTGT400A120D3G Microsemi Power Products Group, APTGT400A120D3G Datasheet - Page 5

• Manufacturer Part Number: APTGT400A120D3G
• Description: IGBT MOD TRENCH PHASE LEG D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT400A120D3G

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 400A
• Current - Collector (ic) (max): 580A
• Current - Collector Cutoff (max): 750µA
• Input Capacitance (cies) @ Vce: 29nF @ 25V
• Power - Max: 2100W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
50
40
30
20
10
0.14
0.12
0.08
0.06
0.04
0.02
0.1
0
0.00001
0
0
Operating Frequency vs Collector Current
switching
0.05
0.9
0.7
0.5
0.1
Hard
100
0.3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZCS
200
ZVS
0.0001
I
C
300
(A)
400
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=1.8 Ω
=600V
500
0.001
rectangular Pulse Duration (Seconds)
600
www.microsemi.com
Single Pulse
0.01
800
600
400
200
APTGT400A120D3G
0
0
Forward Characteristic of diode
0.1
0.4
T
J
=125°C
0.8
V
1.2
F
T
J
(V)
=25°C
1
Diode
1.6
2
10
2.4
5 - 5