FMG2G50US60 Fairchild Semiconductor, FMG2G50US60 Datasheet - Page 4

• Manufacturer Part Number: FMG2G50US60
• Description: IGBT MOLDING 600V 50A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G50US60

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 50A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.46nF @ 30V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2001 Fairchild Semiconductor Corporation
Fig 5. Saturation Voltage vs. V
Fig 1. Typical Output Characteristics
Fig 3. Saturation Voltage vs. Case
140
120
100
80
60
40
20
20
16
12
0
5
4
3
2
1
0
8
4
0
-50
0
0
Common Emitter
T
Common Emitter
V
C
Common Emitter
T
GE
Temperature at Variant Current Level
= 25
C
= 15V
= 25
Collector - Emitter Voltage, V
4
Gate - Emitter Voltage, V
2
0
Case Temperature, T
I
C
= 30A
20V
8
50
4
15V
50A
12
100A
C
GE
[
GE
100
CE
[V]
6
]
[V]
16
V
GE
I
C
12V
= 10V
= 30A
100A
50A
150
20
8
Fig 2. Typical Saturation Voltage Characteristics
Fig 4. Load Current vs. Frequency
Fig 6. Saturation Voltage vs. V
140
120
100
80
60
40
20
20
16
12
60
50
40
30
20
10
0
8
4
0
0
0
Duty cycle : 50%
T
Power Dissipation = 70W
Common Emitter
V
T
T
Common Emitter
T
C
GE
C
C
C
= 100
= 25
= 125
1
= 125
= 15V
Collector - Emitter Voltage, V
4
Gate - Emitter Voltage, V
------
1
I
C
= 30A
Frequency [KHz]
10
8
V
Load Current : peak of square wave
CC
= 300V
50A
12
100A
100
GE
GE
CE
[V]
[V]
16
10
FMG2G50US60 Rev. A
1000
20