APT51F50J Microsemi Power Products Group, APT51F50J Datasheet
APT51F50J
Manufacturer Part Number
APT51F50J
Description
MOSFET N-CH 500V 51A SOT-227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT51F50J.pdf
(4 pages)
Specifications of APT51F50J
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 37A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
51A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
290nC @ 10V
Input Capacitance (ciss) @ Vds
11600pF @ 25V
Power - Max
480W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT51F50JMI
APT51F50JMI
APT51F50JMI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT51F50J
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Company:
Part Number:
APT51F50J
Manufacturer:
POWEREX
Quantity:
1 000
Part Number:
APT51F50J
Quantity:
148
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
Symbol
Symbol
V
T
Torque
Power MOS 8
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced t
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of C
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
FEATURES
J
Isolation
R
R
V
E
I
,T
W
I
• Fast switching with low EMI
• Low t rr for high reliability
• Ultra low C rss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
P
DM
I
AR
θ CS
θ JC
GS
D
AS
D
STG
T
Parameter
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage
Package Weight
Terminals and Mounting Screws.
™
is a high speed, high voltage N-channel switch-mode power MOSFET.
rss
/C
iss
(50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
N-Channel FREDFET
result in excellent noise immunity and low switching loss. The
1
C
= 25°C
C
C
Microsemi Website - http://www.microsemi.com
2
= 25°C
= 100°C
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
rr
, soft
500V, 51A, 0.075Ω Max, t rr ≤310ns
2500
Min
-55
Single die FREDFET
ISOTOP
Ratings
APT51F50J
Typ
0.15
1.03
29.2
1580
±30
230
51
32
37
APT51F50J
®
Max
0.26
480
150
1.1
10
"UL Recognized"
file # E145592
G
°C/W
in·lbf
Unit
Unit
N·m
mJ
°C
W
oz
A
V
A
V
g
D
S
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APT51F50J Summary of contents
Page 1
... Single and two switch forward • Flyback = 25° 100° 25°C C Microsemi Website - http://www.microsemi.com APT51F50J 500V, 51A, 0.075Ω Max ≤310ns , soft rr "UL Recognized" file # E145592 ISOTOP ® APT51F50J Single die FREDFET G Ratings 51 32 230 ±30 1580 37 Min Typ Max 480 0.26 0.15 -55 150 2500 1 ...
Page 2
Symbol Parameter V Drain-Source Breakdown Voltage BR(DSS) ∆V /∆T Breakdown Voltage Temperature Coefficient BR(DSS Drain-Source On Resistance DS(on) V Gate-Source Threshold Voltage GS(th) ∆V /∆T Threshold Voltage Temperature Coefficient GS(th Zero Gate Voltage Drain Current DSS ...
Page 3
V = 10V GS 250 T = -55°C J 200 T = 25°C J 150 100 T = 150° 125° DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) Figure 1, ...
Page 4
... Hex Nut M4 (4 places) 25.2 (0.992) 25.4 (1.000) 0.75 (.030) 12.6 (.496) 0.85 (.033) 12.8 (.504) 1.95 (.077) 2.14 (.084) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. Gate APT51F50J ...