APT51F50J Microsemi Power Products Group, APT51F50J Datasheet - Page 3

MOSFET N-CH 500V 51A SOT-227

APT51F50J

Manufacturer Part Number
APT51F50J
Description
MOSFET N-CH 500V 51A SOT-227
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT51F50J

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 37A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
51A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
290nC @ 10V
Input Capacitance (ciss) @ Vds
11600pF @ 25V
Power - Max
480W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT51F50JMI
APT51F50JMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT51F50J
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT51F50J
Manufacturer:
POWEREX
Quantity:
1 000
Part Number:
APT51F50J
Quantity:
148
300
250
200
150
100
100
2.5
2.0
1.5
1.0
0.5
50
80
60
40
20
16
14
12
10
Figure 7, Gate Charge vs Gate-to-Source Voltage
0
0
0
8
6
4
2
0
-55 -25
0
0
0
Figure 3, R
V
T
V
V
I
NORMALIZED TO
D
GS
J
DS(ON)
GS
= 37A
= 125°C
T
10
50
= 10V
= 10V @ 37A
Figure 1, Output Characteristics
J
Figure 5, Gain vs Drain Current
, JUNCTION TEMPERATURE (°C)
Q
5
g
, DRAIN-TO-SOURCE VOLTAGE (V)
, TOTAL GATE CHARGE (nC)
100 150 200 250 300 350 400
T
20
I
0
D
J
DS(ON)
, DRAIN CURRENT (A)
= 25°C
25
30
V
T
10
DS
J
= 125°C
T
=
vs Junction Temperature
J
V
250V
= -55°C
50
40
DS
V
=
DS
100V
T
15
=
J
75
50
= -55°C
400V
100 125 150
60
20
T
T
J
J
= 150°C
70
= 25°C
25
80
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
20,000
10,000
1000
140
120
100
250
200
150
100
100
200
180
160
140
120
100
80
60
40
20
50
10
80
60
40
20
Figure 6, Capacitance vs Drain-to-Source Voltage
0
0
0
0
0
0
0
T
V
J
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
DS
V
V
V
= 125°C
V
DS
> I
DS
SD
1
Figure 4, Transfer Characteristics
GS
Figure 2, Output Characteristics
D(ON)
, DRAIN-TO-SOURCE VOLTAGE (V)
, DRAIN-TO-SOURCE VOLTAGE (V)
T
, SOURCE-TO-DRAIN VOLTAGE (V)
5
100
0.3
, GATE-TO-SOURCE VOLTAGE (V)
J
= 150°C
x R
2
DS(ON)
10
T
200
3
J
MAX.
0.6
= 25°C
T
J
V
= 125°C
GS
15
4
= 7 & 10V
T
J
= 25°C
300
0.9
T
J
5
= -55°C
20
6
6.5V
400
1.2
25
6V
C
7
C
C
5.5V
iss
oss
rss
5V
500
1.5
30
8

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