IXFN200N10P IXYS, IXFN200N10P Datasheet - Page 4

• Manufacturer Part Number: IXFN200N10P
• Description: MOSFET N-CH 100V 200A SOT-227B
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFN200N10P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 235nC @ 10V
• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Power - Max: 680W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 200 A
• Power Dissipation: 680 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0075
• Ciss, Typ, (pf): 7600
• Qg, Typ, (nc): 235
• Trr, Typ, (ns): -
• Trr, Max, (ns): 150
• Pd, (w): 680
• Rthjc, Max, (ºc/w): 0.22
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
300
250
200
150
100
350
300
250
200
150
100
50
50
100
0
0
0.4
4
0
T
4.5
J
T
= 150
f = 1MH z
J
0.6
5
= 150
Fig. 11. Capacitance
-40
Fig. 7. Input Adm ittance
5
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
25
º
º
C
º
º
C
10
C
5.5
C
0.8
V
V
15
G S
6
S D
V
T
J
DS
- V olts
- V olts
= 25
6.5
1
20
- V olts
º
C
7
25
1.2
7.5
30
8
1.4
C is s
C os s
C rs s
8.5
35
1.6
9
40
1 0 0 0
1 0 0
140
120
100
1 0
80
60
40
20
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
R
V
I
I
D
G
25
D S (o n )
DS
= 100A
= 10m A
50
Fig. 8. Trans conductance
= 50V
50
L im it
Fig. 10. Gate Char ge
Fig . 1 2 . Fo r w a r d - Bia s
S a f e O p e r a t in g A r e a
100
Q
75
1 0
G
I
100 125 150 175 200 225 250
- nanoCoulombs
D C
D
V
150
- A mperes
D S
- V o lts
200
IXFN 200N10P
1 0 0
250
1 0 0 µ s
1 m s
1 0 m s
T
T
T
J
C
J
= 1 7 5
= 2 5
= -40
150
300
25
º
º
º
º
º
C
C
C
C
C
1 0 0 0
350