APT10M11JVFR Microsemi Power Products Group, APT10M11JVFR Datasheet - Page 2

• Manufacturer Part Number: APT10M11JVFR
• Description: MOSFET N-CH 100V 144A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10M11JVFR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 144A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 450nC @ 10V
• Input Capacitance (ciss) @ Vds: 10380pF @ 25V
• Power - Max: 450W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
1
2
THERMAL/ PACKAGE CHARACTERISTICS
Symbol
Symbol
Symbol
V
Torque
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
Isolation
C
C
d
d
I
R
R
C
dv
Q
Q
V
Q
RRM
I
Q
(on)
(off)
SM
t
I
t
oss
t
SD
θJC
θJA
iss
rss
S
rr
gd
/
gs
r
f
rr
g
dt
0.005
0.001
0.05
0.01
0.3
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
Maximum Torque for Device Mounting Screws and Electrical Terminations.
S
S
S
-5
= -I
= -I
= -I
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D
D
D
[Cont.],
[Cont.],
[Cont.],
D=0.5
0.02
0.01
0.05
0.2
0.1
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
di
di
di
10
/
/
/
dt
dt
dt
-4
= 100A/µs)
= 100A/µs)
= 100A/µs)
3
SINGLE PULSE
dv
1
2
/
dt
(Body Diode)
(V
5
GS
RECTANGULAR PULSE DURATION (SECONDS)
= 0V, I
10
-3
S
= -I
D
[Cont.])
I
I
10
D
D
3
4
5
-2
Test Conditions
= I
= I
V
V
See MIL-STD-750 Method 3471
Starting T
I
V
S
DD
D
DD
D
R
V
V
V
R
f = 1 MHz
V
≤ -I
[Cont.] @ 25°C
[Cont.] @ 25°C
= 100V.
DS
GS
GS
G
GS
= 0.5 V
= 0.5 V
T
T
T
T
T
T
D
= 0.6Ω
j
j
j
j
j
j
= 25V
= 10V
= 15V
= 25°C
= 25°C
= 25°C
= 125°C
= 125°C
= 125°C
= 0V
[Cont.],
j
= +25°C, L = 241µH, R
DSS
DSS
10
di
-1
/
dt
= 100A/µs, V
Note:
Peak T J = P DM x Z θJC + T C
2500
MIN
MIN
MIN
Duty Factor D =
1.0
DD
G
t 1
= 25Ω, Peak I
- V
t 2
8600
3200
1180
TYP
TYP
TYP
300
110
0.8
3.0
DSS
10
18
95
16
48
51
9
t 1
, T
/ t 2
j
- 150°C, R
APT10M11JVFR
10380
4480
1770
MAX
MAX
MAX
0.28
L
144
576
220
420
450
145
165
1.3
32
96
75
18
40
13
8
= 144A
10
G
Amps
Amps
UNIT
UNIT
Volts
UNIT
°C/W
= 2.0Ω,
Volts
V/ns
lb•in
nC
µC
pF
ns
ns