APT10M11JVFR Microsemi Power Products Group, APT10M11JVFR Datasheet - Page 4

• Manufacturer Part Number: APT10M11JVFR
• Description: MOSFET N-CH 100V 144A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10M11JVFR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 144A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 450nC @ 10V
• Input Capacitance (ciss) @ Vds: 10380pF @ 25V
• Power - Max: 450W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ISOTOP
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
®
is a Registered Trademark of SGS Thomson.
600
100
50
10
20
16
12
FIGURE 10, MAXIMUM SAFE OPERATING AREA
5
1
8
4
0
V
1
0
DS
LIMITED BY R DS (ON)
OPERATION HERE
T C =+25°C
T J =+150°C
SINGLE PULSE
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D
= 50A
Q
100
g
, TOTAL GATE CHARGE (nC)
r = 4.0 (.157)
(2 places)
5
200
V DS =50V
10
V DS =20V
300
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
V DS =80V
400
31.5 (1.240)
31.7 (1.248)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
SOT-227 (ISOTOP
50
7.8 (.307)
8.2 (.322)
500
100
Dimensions in Millimeters and (Inches)
100µS
1mS
10mS
100mS
DC
3.3 (.129)
3.6 (.143)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
®
* Source
* Source
) Package Outline
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
30,000
10,000
5,000
1,000
500
400
100
50
10
1.95 (.077)
2.14 (.084)
5
1
.01
V
V
0
DS
SD
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
0.75 (.030)
0.85 (.033)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
C iss
C oss
Drain
Gate
Hex Nut M4
*
0.4
(4 places)
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
.1
12.6 (.496)
12.8 (.504)
T J =+150°C
0.8
25.2 (0.992)
25.4 (1.000)
1
1.2
T J =+25°C
C iss
C oss
C rss
1.6
10
APT10M11JVFR
2.0
50