APT5010JVR Microsemi Power Products Group, APT5010JVR Datasheet

APT5010JVR

Manufacturer Part Number

APT5010JVR

Description

MOSFET N-CH 500V 44A SOT-227

Manufacturer

Microsemi Power Products Group

Series

POWER MOS V®r

Datasheet

1.APT5010JVR.pdf (4 pages)

Specifications of APT5010JVR

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

100 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

44A

Vgs(th) (max) @ Id

4V @ 2.5mA

Gate Charge (qg) @ Vgs

470nC @ 10V

Input Capacitance (ciss) @ Vds

8900pF @ 25V

Power - Max

450W

Mounting Type

Chassis Mount

Package / Case

SOT-227, miniBLOC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT5010JVR

Manufacturer:

FREESCALE

Quantity:

1 420

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT5010JVR

Manufacturer:

APT

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT5010JVRU3

Manufacturer:

APT

Quantity:

15 500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT5010JVRX

Manufacturer:

APT

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT5010JVRX

Manufacturer:

APT

Quantity:

726

Current page: 1 of 4
Download datasheet (72Kb)

Power MOS V

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching

• Lower Leakage

MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

USA

405 S.W. Columbia Street

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

Symbol

DS(on)

D(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

On State Drain Current

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

is a new generation of high voltage N-Channel enhancement

POWER MOS V

(Repetitive and Non-Repetitive)

APT Website - http://www.advancedpower.com

= V

= 25 C

• Popular SOT-227 Package

• 100% Avalanche Tested

= 25 C

> I

D(on)

, I

= 30V, V

Bend, Oregon 97702 -1035

F-33700 Merignac - France

= V

= 0.8 V

x R

= 0V, I

= 2.5mA)

DSS

DS(on)

= 10V, 0.5 I

, V

DSS

= 250 A)

Max, V

= 0V)

, V

= 0V)

D[Cont.]

= 0V, T

All Ratings: T

= 10V)

)

= 125 C)

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

500V 44A 0.100

= 25 C unless otherwise specified.

APT5010JVR

MIN

500

APT5010JVR

-55 to 150

ISOTOP

2500

TYP

500

176

450

300

3.6

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

0.100

MAX

250

100

"UL Recognized"

Amps

Watts

Amps

Ohms

UNIT

W/ C

UNIT

Volts

Related parts for APT5010JVR

APT5010JVR Summary of contents

Page 1

... I = 2.5mA APT Website - http://www.advancedpower.com Bend, Oregon 97702 -1035 F-33700 Merignac - France APT5010JVR 500V 44A 0.100 ® "UL Recognized" ISOTOP ® unless otherwise specified. C APT5010JVR 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 2500 MIN TYP MAX 500 44 0.100 ...

Page 2

... G (Body Diode 0V D[Cont /dt = 100A D[Cont /dt = 100A D[Cont See MIL-STD-750 Method 3471 4 Starting 2.58mH RECTANGULAR PULSE DURATION (SECONDS) APT5010JVR MIN TYP MAX 7400 8900 1000 1400 380 570 312 470 50 75 DSS 127 190 DSS MIN TYP MAX 44 176 1.3 620 14 ...

Page 3

... APT5010JVR 100 V GS =7V, 8V, 10V & 15V 100 150 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 - + +125 > (ON (ON)MAX. 60 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE +125 + - GATE-TO-SOURCE VOLTAGE (VOLTS) GS FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 100 T , CASE TEMPERATURE ( C) C FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2 ...

Page 4

... H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Source * Source Dimensions in Millimeters and (Inches) 5,045,903 5,089,434 5,182,234 5,256,583 4,748,103 5,283,202 5,231,474 APT5010JVR C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150 =+25 C 0.4 0.8 1.2 1.6 2.0 , SOURCE-TO-DRAIN VOLTAGE (VOLTS ...

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