APT5010JVR Microsemi Power Products Group, APT5010JVR Datasheet - Page 2

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APT5010JVR

Manufacturer Part Number
APT5010JVR
Description
MOSFET N-CH 500V 44A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS V®r
Datasheet

Specifications of APT5010JVR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
4V @ 2.5mA
Gate Charge (qg) @ Vgs
470nC @ 10V
Input Capacitance (ciss) @ Vds
8900pF @ 25V
Power - Max
450W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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1
2
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL / PACKAGE CHARACTERISTICS
Symbol
Symbol
Symbol
V
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Torque
t
t
Isolation
R
C
R
C
V
C
Q
Q
Q
d(on)
d(off)
I
Q
t
I
SM
t
t
oss
SD
rss
S
iss
gs
gd
r
rr
f
JC
g
JA
rr
0.005
0.001
0.05
0.01
0.3
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
Maximum Torque for Device Mounting Screws and Electrical Terminations.
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D=0.5
0.02
0.01
0.05
0.2
0.1
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
10
-4
3
SINGLE PULSE
1
2
(V
(Body Diode)
S
= -I
GS
S
= -I
= 0V, I
D[Cont.]
RECTANGULAR PULSE DURATION (SECONDS)
10
D[Cont.]
-3
, dl
S
= -I
, dl
S
/dt = 100A/ s)
D[Cont.]
S
/dt = 100A/ s)
10
I
I
)
D
D
3
4
Test Conditions
-2
V
V
= I
= I
See MIL-STD-750 Method 3471
Starting T
DD
DD
V
V
V
R
D[Cont.]
D[Cont.]
f = 1 MHz
V
DS
GS
GS
G
GS
= 0.5 V
= 0.5 V
= 0.6
= 25V
= 10V
= 15V
= 0V
j
@ 25 C
@ 25 C
= +25 C, L = 2.58mH, R
DSS
DSS
10
-1
Note:
Peak T J = P DM x Z JC + T C
2500
MIN
MIN
MIN
Duty Factor D =
1.0
t 1
G
= 25 , Peak I
t 2
7400
1000
14.7
TYP
620
TYP
TYP
380
312
127
50
14
16
54
5
t 1
/ t 2
8900
1400
MAX
0.28
MAX
MAX
570
470
190
176
L
1.3
40
13
75
30
32
80
10
44
APT5010JVR
= 44A
10
Amps
UNIT
UNIT
Volts
UNIT
Volts
lb•in
C/W
pF
nC
ns
ns
C

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