APT50M65JFLL Microsemi Power Products Group, APT50M65JFLL Datasheet - Page 2

• Manufacturer Part Number: APT50M65JFLL
• Description: MOSFET N-CH 500V 58A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT50M65JFLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 29A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 58A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 141nC @ 10V
• Input Capacitance (ciss) @ Vds: 7010pF @ 25V
• Power - Max: 520W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

THERMAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
R
R
t
dv
I
C
t
V
C
C
I
Q
RRM
Q
Q
E
E
d(on)
d(off)
E
E
Q
SM
t
I
SD
S
oss
t
t
rr
/
iss
rss
gd
on
off
on
off
rr
JC
gs
r
JA
f
dt
g
0.25
0.20
0.15
0.10
0.05
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
0
Characteristic
Junction to Case
Junction to Ambient
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
10
S
S
S
= -67A,
= -67A,
= -67A,
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.9
0.7
0.5
0.3
0.1
0.05
di
di
di
/
/
/
dt
dt
dt
= 100A/µs)
= 100A/µs)
= 100A/µs)
3
10
-4
dv
1
2
/
dt
(Body Diode)
(V
5
6
6
GS
SINGLE PULSE
= 0V, I
RECTANGULAR PULSE DURATION (SECONDS)
S
10
= -67A)
-3
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
V
RESISTIVE SWITCHING
V
Test Conditions
DD
dv
device itself.
DD
I
I
D
D
I
I
D
D
/
= 333V, V
dt
= 67A, R
= 67A, R
= 333V V
V
V
= 67A @ 25°C
= 67A @ 25°C
V
V
V
R
f = 1 MHz
V
DD
DD
numbers reflect the limitations of the test circuit rather than the
T
T
T
T
T
T
DS
GS
GS
G
GS
j
j
j
j
j
j
= 0.6
= 250V
= 250V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25V
= 10V
= 15V
= 0V
10
j
= +25°C, L = 1.78mH, R
G
G
GS
-2
GS
= 3
= 3
= 15V
I
= 15V
S
-
58A
di
Note:
/
dt
Peak T J = P DM x Z JC + T C
MIN
MIN
MIN
Duty Factor D =
700A/µs
10
-1
t 1
G
= 25 , Peak I
t 2
7010
1390
1035
1556
1013
TYP
TYP
TYP
141
845
2.6
9.6
17
31
87
40
70
12
28
29
30
V
R
t 1
/ t 2
500V
APT50M65JFLL
MAX
MAX
MAX
0.24
232
270
540
1.3
L
58
15
40
1.0
= 58A
T
J
150
Amps
Amps
UNIT
Volts
UNIT
°C/W
V/ns
UNIT
°
µC
ns
nC
C
pF
ns
µ
J