APT50M65JFLL Microsemi Power Products Group, APT50M65JFLL Datasheet - Page 3

• Manufacturer Part Number: APT50M65JFLL
• Description: MOSFET N-CH 500V 58A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT50M65JFLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 29A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 58A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 141nC @ 10V
• Input Capacitance (ciss) @ Vds: 7010pF @ 25V
• Power - Max: 520W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
Case temperature
Junction
temp. ( ”C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
(Watts)
Power
180
160
140
120
100
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
60
50
40
30
20
10
0
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-50
25
0
V
FIGURE 4, TRANSFER CHARACTERISTICS
V DS > I D (ON) x R DS (ON)MAX.
GS
V
@ <0.5 % DUTY CYCLE
-25
250µSEC. PULSE TEST
, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
I
GS
T
D
J
= 29A
T
, JUNCTION TEMPERATURE (°C)
50
= 10V
C
2
, CASE TEMPERATURE (°C)
0
RC MODEL
T J = +125°C
3
T J = +25°C
25
75
0.0528
0.0651
0.123
4
50
5
100
75
6
100 125 150
T J = -55°C
125
7
0.0203F
0.173F
0.490F
8
150
9
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
180
160
140
120
100
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.4
1.3
1.2
1.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
0
-50
-50
0
0
V
V
DS
NORMALIZED TO
FIGURE 5, R
GS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
-25
10
= 10V @ 29A
T
I
15 &10V
J
D
5
T
, JUNCTION TEMPERATURE (°C)
, DRAIN CURRENT (AMPERES)
C
V GS =20V
, CASE TEMPERATURE (°C)
0
0
20
10
DS
25
25
(ON) vs DRAIN CURRENT
30
15
50
50
V GS =10V
8V
40
75
75
20
7V
50
100 125 150
100 125 150
6.5V
6V
25
60
APT50M65JFLL
5.5V
5V
30
70