APTC60DAM35T1G Microsemi Power Products Group, APTC60DAM35T1G Datasheet - Page 4

• Manufacturer Part Number: APTC60DAM35T1G
• Description: MOSFET N-CH 600V 72A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTC60DAM35T1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 72A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 72A
• Vgs(th) (max) @ Id: 3.9V @ 5.4mA
• Gate Charge (qg) @ Vgs: 518nC @ 10V
• Input Capacitance (ciss) @ Vds: 14000pF @ 25V
• Power - Max: 416W
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
1.05
0.95
0.35
0.25
0.15
0.05
400
360
320
280
240
200
160
120
1.1
0.9
0.3
0.2
0.1
80
40
0.00001
0
1
0
0
0
Low Voltage Output Characteristics
Normalized to
V
V
GS
0.05
0.5
V
0.1
0.9
0.7
0.3
DS
=10V @ 36A
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
GS
20
R
, Drain to Source Voltage (V)
=15&10V
5
DS
I
(on) vs Drain Current
D
, Drain Current (A)
40
0.0001
10
60
15
V
GS
80
V
=10V
GS
=20V
20
6.5V
100
0.001
6V
4.5V
5.5V
5V
4V
rectangular Pulse Duration (Seconds)
Single Pulse
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120
25
0.01
APTC60DAM35T1G
280
240
200
160
120
80
40
80
70
60
50
40
30
20
10
0
0
DC Drain Current vs Case Temperature
25
0
V
250µs pulse test @ < 0.5 duty cycle
DS
0.1
V
GS
> I
T
Transfert Characteristics
1
C
, Gate to Source Voltage (V)
D
50
, Case Temperature (°C)
(on)xR
2
T
J
=25°C
DS
T
75
(on)MAX
J
3
=125°C
1
4
100
5
125
6
10
150
7
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