APTC60DAM35T1G Microsemi Power Products Group, APTC60DAM35T1G Datasheet - Page 5

• Manufacturer Part Number: APTC60DAM35T1G
• Description: MOSFET N-CH 600V 72A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTC60DAM35T1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 72A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 72A
• Vgs(th) (max) @ Id: 3.9V @ 5.4mA
• Gate Charge (qg) @ Vgs: 518nC @ 10V
• Input Capacitance (ciss) @ Vds: 14000pF @ 25V
• Power - Max: 416W
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
100
1.2
1.1
1.0
0.9
0.8
1.1
1.0
0.9
0.8
0.7
0.6
10
Capacitance vs Drain to Source Voltage
25
25
0
Breakdown Voltage vs Temperature
Threshold Voltage vs Temperature
V
T
DS
J
, Junction Temperature (°C)
T
, Drain to Source Voltage (V)
10
50
50
C
, Case Temperature (°C)
20
75
75
100
100
30
125
125
40
Coss
Crss
Ciss
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150
150
50
APTC60DAM35T1G
1000
14
12
10
100
10
8
6
4
2
0
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Gate Charge vs Gate to Source Voltage
0
1
I
T
limited by R
25
D
J
=72A
V
=25°C
100
Maximum Safe Operating Area
DS
V
I
T
D
ON resistance vs Temperature
GS
= 72A
J
, Drain to Source Voltage (V)
, Junction Temperature (°C)
=10V
50
Single pulse
T
T
DS
Gate Charge (nC)
J
C
200
on
=150°C
=25°C
10
75
300
V
DS
=300V
100
400
100
V
DS
=120V
125
V
100 µs
500
DS
10 ms
1 ms
=480V
150
1000
600
5 – 6