APTM50H10FT3G Microsemi Power Products Group, APTM50H10FT3G Datasheet - Page 3

• Manufacturer Part Number: APTM50H10FT3G
• Description: MOSFET MODULE FULL BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50H10FT3G

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 37A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Input Capacitance (ciss) @ Vds: 4367pF @ 25V
• Power - Max: 312W
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal and package characteristics
Temperature sensor NTC
Symbol Characteristic
Symbol Characteristic
SP3 Package outline
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
Torque
V
B
R
T
R
T
Wt
T
ISOL
STG
25/85
thJC
C
25
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Resistance @ 25°C
T
25
= 298.15 K
28
1
(dimensions in mm)
R
T
=
exp
(see application note APT0406 on www.microsemi.com for more information).



B
25
/
85
R

 

25
T
1
25
−
T
1

 




T: Thermistor temperature
R
T
www.microsemi.com
: Thermistor value at T
17
12
To heatsink
APTM50H10FT3G
M4
2500
Min
Min
-40
-40
-40
2.5
3952
Typ
Typ
50
Max
0.40
Max
150
125
100
110
4.7
°C/W
Unit
Unit
N.m
kΩ
°C
K
V
g
3 - 6