APTM50H10FT3G Microsemi Power Products Group, APTM50H10FT3G Datasheet - Page 5

• Manufacturer Part Number: APTM50H10FT3G
• Description: MOSFET MODULE FULL BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50H10FT3G

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 37A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Input Capacitance (ciss) @ Vds: 4367pF @ 25V
• Power - Max: 312W
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
100
1.2
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
Capacitance vs Drain to Source Voltage
-50 -25
-50 -25
0
Threshold Voltage vs Temperature
Breakdown Voltage vs Temperature
V
T
DS
J
, Junction Temperature (°C)
T
, Drain to Source Voltage (V)
10
C
, Case Temperature (°C)
0
0
25 50
25 50
20
30
75 100 125 150
75 100 125 150
40
Coss
Ciss
Crss
50
www.microsemi.com
1000
100
10
14
12
10
2.5
2.0
1.5
1.0
0.5
0.0
1
Gate Charge vs Gate to Source Voltage
8
6
4
2
0
APTM50H10FT3G
1
0
-50 -25
limited by R
I
T
D
limited by R
J
=37A
V
I
V
=25°C
D
GS
ON resistance vs Temperature
=18.5A
T
DS
20
Maximum Safe Operating Area
J
=10V
, Junction Temperature (°C)
, Drain to Source Voltage (V)
DSon
Gate Charge (nC)
Single pulse
T
T
40
0
DS
J
C
10
=150°C
on
=25°C
25
V
60
DS
=250V
50 75 100 125 150
V
80
DS
100
=100V
V
100 120 140
DS
=400V
100µs
10ms
1ms
1000
5 - 6