APTM10UM02FAG Microsemi Power Products Group, APTM10UM02FAG Datasheet

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APTM10UM02FAG

Manufacturer Part Number
APTM10UM02FAG
Description
MOSFET N-CH 100V 570A SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM10UM02FAG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 mOhm @ 200A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
570A
Vgs(th) (max) @ Id
4V @ 10mA
Gate Charge (qg) @ Vgs
1360nC @ 10V
Input Capacitance (ciss) @ Vds
40000pF @ 25V
Power - Max
1660W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTM10UM02FAG
Manufacturer:
Microsemi Corporation
Quantity:
379
Absolute maximum ratings
* Specification of MOSFET device but output current must be limited to 500A to not exceed a delta of temperature
Symbol
greater than 100°C for the connectors.
R
V
MOSFET Power Module
V
E
E
I
SK
S
G
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
DK
SK
G
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Single Switch
S
Parameter
D
D
DK
www.microsemi.com
Application
Features
Benefits
V
R
I
T
T
T
D
c
c
c
DSS
DSon
= 25°C
= 80°C
= 25°C
= 570A* @ Tc = 25°C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Power MOS V
Kelvin source for easy drive
Very low stray inductance
High level of integration
AlN substrate for improved thermal performance
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
-
-
-
-
-
-
-
-
APTM10UM02FAG
= 100V
= 2.25mΩ typ @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Fast intrinsic diode
Symmetrical design
M5 power connectors
Max ratings
DSon
1900
1660
3000
570 *
100
429
±30
100
2.5
50
®
FREDFETs
Unit
mΩ
mJ
W
V
A
V
A
1 - 6

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APTM10UM02FAG Summary of contents

Page 1

... AS * Specification of MOSFET device but output current must be limited to 500A to not exceed a delta of temperature greater than 100°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM10UM02FAG V = 100V DSS R = 2.25mΩ typ @ Tj = 25°C ...

Page 2

... Peak Diode Recovery t Reverse Recovery Time rr Q Reverse Recovery Charge rr dv/dt numbers reflect the limitations of the circuit rather than the device itself. ≤ - 570A di/dt ≤ 400A/µ APTM10UM02FAG = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 100V 125°C ...

Page 3

... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM10UM02FAG To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.075 °C/W 2500 V ...

Page 4

... Drain to Source Voltage ( Drain Current DS(on) 1.2 Normalized to V =10V @ 200A GS 1.1 1 0.9 0.8 0 100 200 300 I , Drain Current (A) D APTM10UM02FAG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 480 V DS 400 250µs pulse test @ < 0.5 duty cycle 320 240 7V 160 ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss Coss 10000 Crss 1000 Drain to Source Voltage (V) DS www.microsemi.com APTM10UM02FAG ON resistance vs Temperature 2.5 V =10V 200A 2.0 D 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 10000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM10UM02FAG 300 250 ...

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