APTM10UM02FAG Microsemi Power Products Group, APTM10UM02FAG Datasheet - Page 5

• Manufacturer Part Number: APTM10UM02FAG
• Description: MOSFET N-CH 100V 570A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM10UM02FAG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 570A
• Vgs(th) (max) @ Id: 4V @ 10mA
• Gate Charge (qg) @ Vgs: 1360nC @ 10V
• Input Capacitance (ciss) @ Vds: 40000pF @ 25V
• Power - Max: 1660W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Capacitance vs Drain to Source Voltage
-50 -25
Threshold Voltage vs Temperature
-50 -25
0
Breakdown Voltage vs Temperature
V
T
DS
J
, Junction Temperature (°C)
, Drain to Source Voltage (V)
T
10
C
, Case Temperature (°C)
0
0
25 50 75 100 125 150
25 50 75 100 125 150
20
30
40
Coss
www.microsemi.com
Ciss
Crss
50
10000
1000
APTM10UM02FAG
100
16
14
12
10
10
Gate Charge vs Gate to Source Voltage
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
1
0
-50 -25
1
Single pulse
T
T
limited by
R
I
T
D
DSon
J
C
J
=400A
V
I
V
=150°C
=25°C
D
Maximum Safe Operating Area
=25°C
ON resistance vs Temperature
GS
= 200A
T
DS
400
J
=10V
, Junction Temperature (°C)
, Drain to Source Voltage (V)
0
Gate Charge (nC)
800
25
V
DS
=50V
10
50
1200
V
75 100 125 150
DS
=20V
1600
V
DS
10ms
100µs
=80V
1ms
2000
100
5 - 6