APTM10AM02FG Microsemi Power Products Group, APTM10AM02FG Datasheet - Page 2

• Manufacturer Part Number: APTM10AM02FG
• Description: PWR MODULE MOSFET 100V 495A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM10AM02FG

• Fet Type: 2 N-Channel (Half Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 495A
• Vgs(th) (max) @ Id: 4V @ 10mA
• Gate Charge (qg) @ Vgs: 1360nC @ 10V
• Input Capacitance (ciss) @ Vds: 40000pF @ 25V
• Power - Max: 1250W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTM10AM02FGMI; APTM10AM02FGMI

Dynamic Characteristics
Source - Drain diode ratings and characteristics
Electrical Characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
R
V
T
T
dv/dt
I
I
C
V
C
C
Q
Q
E
E
E
E
DS(on)
GS(th)
Q
Q
DSS
d(off)
I
GSS
d(on)
T
T
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
t
S
oss
iss
rss
on
off
on
off
SD
rr
gd
S
gs
rr
g
r
f
≤ - 495A
Peak Diode Recovery
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Continuous Source current
(Body diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
di/dt ≤ 400A/µs
All ratings @ T
V
R
≤ V
DSS
j
Test Conditions
V
V
f = 1MHz
V
V
I
Inductive switching @ 125°C
V
V
I
R
Inductive switching @ 25°C
V
I
Inductive switching @ 125°C
V
I
Test Conditions
V
I
V
di
Test Conditions
V
V
V
V
V
D
D
D
D
S
= 25°C unless otherwise specified
GS
GS
GS
DS
GS
Bus
GS
Bus
G
GS
GS
GS
R
GS
GS
GS
S
= - 400A
= 400A
= 400A
= 400A, R
= 400A, R
/dt = 400A/µs
= 1.25Ω
= 66V
= 0V,V
= 0V,V
= 0V
= 25V
= 10V
= 15V
= 15V, V
= 15V, V
= 0V, I
= 10V, I
= V
= ±30 V, V
T
= 50V
= 66V
www.microsemi.com
j
≤ 150°C
DS
, I
DS
DS
S
D
G
G
D
= - 400A
= 100V
= 80V
Bus
Bus
= 10mA
=1.25Ω
= 1.25Ω
= 200A
DS
= 66V
= 66V
= 0V
Tc = 25°C
Tc = 80°C
T
T
T
T
T
T
j
j
j
j
= 25°C
= 125°C
= 25°C
= 125°C
j
j
= 25°C
= 125°C
APTM10AM02FG
Min
Min
Min
2
1360
15.7
2.41
2.43
2.56
2.25
Typ
240
720
160
240
500
160
Typ
Typ
5.9
2.2
1.6
6.8
40
2000
±400
Max
Max
Max
400
495
370
190
370
2.5
1.3
4
5
Unit
Unit
Unit
V/ns
mΩ
µA
µC
nA
nF
nC
mJ
mJ
ns
ns
A
V
V
2 - 6