APTM10AM02FG Microsemi Power Products Group, APTM10AM02FG Datasheet - Page 5

• Manufacturer Part Number: APTM10AM02FG
• Description: PWR MODULE MOSFET 100V 495A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM10AM02FG

• Fet Type: 2 N-Channel (Half Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 495A
• Vgs(th) (max) @ Id: 4V @ 10mA
• Gate Charge (qg) @ Vgs: 1360nC @ 10V
• Input Capacitance (ciss) @ Vds: 40000pF @ 25V
• Power - Max: 1250W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTM10AM02FGMI; APTM10AM02FGMI

100000
10000
1000
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Capacitance vs Drain to Source Voltage
-50 -25
Threshold Voltage vs Temperature
-50 -25
0
Breakdown Voltage vs Temperature
V
T
DS
J
, Junction Temperature (°C)
, Drain to Source Voltage (V)
T
10
C
, Case Temperature (°C)
0
0
25 50 75 100 125 150
25 50 75 100 125 150
20
30
40
Coss
Ciss
Crss
50
www.microsemi.com
10000
1000
100
16
14
12
10
10
Gate Charge vs Gate to Source Voltage
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
1
0
APTM10AM02FG
-50 -25
1
Single pulse
T
T
limited by
R
I
T
D
DSon
J
C
J
=400A
V
I
V
=150°C
=25°C
D
Maximum Safe Operating Area
=25°C
ON resistance vs Temperature
GS
= 200A
T
DS
400
J
=10V
, Junction Temperature (°C)
, Drain to Source Voltage (V)
0
Gate Charge (nC)
800
25
V
DS
=50V
10
50
1200
V
75 100 125 150
DS
=20V
1600
V
DS
10ms
=80V
1ms
100µs
2000
100
5 - 6