IXTN200N10T IXYS, IXTN200N10T Datasheet

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IXTN200N10T

Manufacturer Part Number
IXTN200N10T
Description
MOSFET N-CH 100V 200A SOT-227
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTN200N10T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
152nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 25V
Power - Max
550W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0055
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
152
Trr, Typ, (ns)
76
Trr, Max, (ns)
-
Pd, (w)
550
Rthjc, Max, (k/w)
0.30
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTN200N10T
Manufacturer:
NXP
Quantity:
1 192
Part Number:
IXTN200N10T
Manufacturer:
IXYS
Quantity:
288
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
Symbol
V
V
V
V
I
I
I
I
E
P
T
T
T
T
V
M
Weight
GSS
DSS
D25
LRMS
DM
A
J
JM
stg
L
GS(th)
DSS
DGR
GSS
GSM
AS
D
ISOL
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
V
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
TM
GS
DSS
, I
D
D
D
= 250μA
= 250μA
= 50A, Note 1
DS
= 0V
GS
= 1MΩ
Preliminary Technical Information
T
J
= 150°C
t = 1s
t = 1min
JM
IXTN200N10T
100
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.3/11.5
Typ.
1.5/13
2500
3000
± 30
100
100
±20
200
100
500
550
175
300
1.5
40
30
Max.
±200
250
4.5
5.5
Nm/lb.in.
Nm/lb.in.
5
V~
V~
nA
μA
μA
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
g
J
V
I
R
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Advantages
• Low gate charge drive requirement
• High power density
Applications
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC and DC motor drives
• Uninterrupted power supplies
• High speed power switching
miniBLOC, SOT-227 B
D25
International standard package
miniBLOC, with Aluminium nitride
Avalanche Rated
Low R
Low package inductance
Fast intrinsic Rectifier
power supplies
applications
isolation
DS(on)
DSS
E153432
DS(ON)
= 100V
= 200A
≤ ≤ ≤ ≤ ≤ 5.5mΩ Ω Ω Ω Ω
and Q
G
G
D = Drain
S
DS99678A(09/08)
D
S

IXTN200N10T Summary of contents

Page 1

... GSS DSS DS DSS 10V 50A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTN200N10T Maximum Ratings 100 = 1MΩ 100 GS ±20 ± 30 200 100 500 JM 40 1.5 550 -55 ... +175 175 -55 ... +175 300 t = 1min 2500 3000 1.5/13 1.3/11.5 ...

Page 2

... DSS D 47 0.05 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ 50V 5.4 R 205 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTN200N10T Max. SOT-227B Outline °C/W 0.27 °C/W Max. 200 A 500 A 1 6,404,065 B1 6,683,344 6,727,585 ...

Page 3

... V = 10V 1.2 1.4 1.6 1.8 2.0 2.2 = 100A Value 175º 25ºC J 200 240 280 320 IXTN200N10T Fig. 2. Extended Output Characteristics @ 25ºC 350 V = 10V GS 9V 300 8V 250 200 7V 150 100 Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2.8 2 ...

Page 4

... T = 25º 0.9 1.0 1.1 1.2 0 1.00 C iss 0.10 C oss C rss 0. 0.0001 IXTN200N10T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 125 150 175 I - Amperes D Fig. 10. Gate Charge V = 50V 25A 10mA 100 120 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0 ...

Page 5

... I = 25A 200 d(off) 180 3.3Ω 10V G GS 160 V = 50V DS 70 140 65 120 60 100 IXTN200N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 3.3Ω 10V 50V Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature d(off 3.3Ω 10V 50V 25A 50A ...

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