IXTN200N10T IXYS, IXTN200N10T Datasheet
IXTN200N10T
Specifications of IXTN200N10T
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IXTN200N10T Summary of contents
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... GSS DSS DS DSS 10V 50A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTN200N10T Maximum Ratings 100 = 1MΩ 100 GS ±20 ± 30 200 100 500 JM 40 1.5 550 -55 ... +175 175 -55 ... +175 300 t = 1min 2500 3000 1.5/13 1.3/11.5 ...
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... DSS D 47 0.05 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ 50V 5.4 R 205 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTN200N10T Max. SOT-227B Outline °C/W 0.27 °C/W Max. 200 A 500 A 1 6,404,065 B1 6,683,344 6,727,585 ...
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... V = 10V 1.2 1.4 1.6 1.8 2.0 2.2 = 100A Value 175º 25ºC J 200 240 280 320 IXTN200N10T Fig. 2. Extended Output Characteristics @ 25ºC 350 V = 10V GS 9V 300 8V 250 200 7V 150 100 Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2.8 2 ...
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... T = 25º 0.9 1.0 1.1 1.2 0 1.00 C iss 0.10 C oss C rss 0. 0.0001 IXTN200N10T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 125 150 175 I - Amperes D Fig. 10. Gate Charge V = 50V 25A 10mA 100 120 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0 ...
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... I = 25A 200 d(off) 180 3.3Ω 10V G GS 160 V = 50V DS 70 140 65 120 60 100 IXTN200N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 3.3Ω 10V 50V Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature d(off 3.3Ω 10V 50V 25A 50A ...