IXTN200N10T IXYS, IXTN200N10T Datasheet - Page 3

• Manufacturer Part Number: IXTN200N10T
• Description: MOSFET N-CH 100V 200A SOT-227
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTN200N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 152nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 550W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0055
• Ciss, Typ, (pf): 9400
• Qg, Typ, (nc): 152
• Trr, Typ, (ns): 76
• Trr, Max, (ns): -
• Pd, (w): 550
• Rthjc, Max, (k/w): 0.30
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
200
180
160
140
120
100
200
180
160
140
120
100
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
60
40
20
0
0
0.0
0.0
0
Fig. 5. R
V
0.1
0.2
GS
40
= 10V
0.2
0.4
15V
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
0.3
80
- - - -
0.6
vs. Drain Current
0.4
Normalized to I
0.8
120
I
D
V
V
0.5
DS
- Amperes
V
@ 150ºC
DS
@ 25ºC
GS
1.0
- Volts
- Volts
= 10V
0.6
160
9V
8V
1.2
V
0.7
GS
200
7V
6V
5V
1.4
= 10V
0.8
D
9V
8V
= 100A Value
7V
6V
5V
1.6
0.9
240
T
T
J
J
1.8
= 25ºC
1.0
= 175ºC
280
2.0
1.1
320
1.2
2.2
350
300
250
200
150
100
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
110
100
50
90
80
70
60
50
40
30
20
10
0
0
-50
-50
0
Fig. 6. Drain Current vs. Case Temperature
Fig. 4. R
V
V
GS
GS
Fig. 2. Extended Output Characteristics
External Lead Current Limit
-25
-25
= 10V
= 10V
9V
8V
1
DS(on)
0
0
vs. Junction Temperature
7V
6V
5V
T
T
J
C
- Degrees Centigrade
25
- Degrees Centigrade
25
2
Normalized to I
V
DS
@ 25ºC
50
50
- Volts
I
D
IXTN200N10T
3
= 200A
75
75
100
I
100
D
D
4
= 100A
= 100A Value
125
125
5
150
150
175
175
6