IXTN200N10T IXYS, IXTN200N10T Datasheet - Page 4

• Manufacturer Part Number: IXTN200N10T
• Description: MOSFET N-CH 100V 200A SOT-227
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTN200N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 152nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 550W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0055
• Ciss, Typ, (pf): 9400
• Qg, Typ, (nc): 152
• Trr, Typ, (ns): 76
• Trr, Max, (ns): -
• Pd, (w): 550
• Rthjc, Max, (k/w): 0.30
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
250
225
200
175
150
125
100
300
270
240
210
180
150
120
75
50
25
90
60
30
100
0
0
3.5
0.4
0
f
4.0
0.5
= 1MHz
5
Fig. 9. Forward Voltage Drop of
4.5
0.6
10
Fig. 7. Input Admittance
T
Fig. 11. Capacitance
J
= 150ºC
Intrinsic Diode
T
0.7
5.0
J
15
V
V
= 150ºC
V
GS
SD
- 40ºC
DS
25ºC
- Volts
- Volts
- Volts
0.8
5.5
20
0.9
6.0
25
T
C iss
C oss
C rss
J
= 25ºC
1.0
6.5
30
1.1
7.0
35
1.2
7.5
40
1.00
0.10
0.01
160
140
120
100
80
60
40
20
10
0.0001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
DS
25
= 25A
= 10mA
20
Fig. 12. Maximum Transient Thermal
= 50V
0.001
50
Fig. 8. Transconductance
40
75
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
G
- NanoCoulombs
60
I
0.01
D
100
Impedance
- Amperes
125
80
IXTN200N10T
150
0.1
100
T
J
= - 40ºC
175
IXYS REF: T_200N10T(6V)9-30-08-D
150ºC
25ºC
120
200
1
140
225
160
250
10