FDD5N50NZFTM Fairchild Semiconductor, FDD5N50NZFTM Datasheet - Page 2

• Manufacturer Part Number: FDD5N50NZFTM
• Description: MOSFET N-CH 500V DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDD5N50NZFTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.85A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 485pF @ 25V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD5N50NZF Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 23mH, I
3. I
4. Pulse Test: Pulse width ≤ 300µs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
BV
∆BV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
∆T
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
SD
Device Marking
DSS
Symbol
J
FDD5N50NZF
≤ 3.7A, di/dt ≤ 200A/µs, V
DSS
AS
= 3.7A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
FDD5N50NZFTM
≤ BV
G
DSS
= 25Ω, Starting T
Device
Parameter
, Starting T
J
T
= 25°C
C
J
= 25°C
= 25
o
C unless otherwise noted
Package
D-PAK
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
V
D
D
DS
DS
GS
DD
GS
GS
GS
GS
GS
DS
DS
DS
GS
F
= 250µA, V
= 250µA, Referenced to 25
/dt = 100A/µs
= 500V, V
= 400V, V
= 0V, I
= ±25V, V
= 20V, I
= 25V, V
= 400V I
= 250V, I
= 10V, R
= 0V, I
= V
= 10V, I
= 10V
DS
Test Conditions
, I
SD
2
SD
D
Reel Size
D
D
D
GS
GS
D
GEN
380mm
= 1.85A
= 3.7A
= 3.7A
GS
GS
= 1.85A
DS
= 250µA
= 3.7A
= 3.7A
= 0V
= 0V, T
= 0V
= 0V,T
= 0V
= 25Ω
C
C
= 125
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
C
o
C
o
Tape Width
C
16mm
Min.
500
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.15
1.47
365
0.5
4.2
87
50
12
19
31
22
4
9
2
4
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
1.75
100
±10
485
2500
3.7
1.5
5.0
10
65
12
14
35
50
70
55
8
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
µA
µA
pF
pF
pF
µC
ns
ns
ns
ns
ns
V
Ω
A
A
V
V
S
o
C