FDPF5N50TYDTU Fairchild Semiconductor, FDPF5N50TYDTU Datasheet - Page 4

• Manufacturer Part Number: FDPF5N50TYDTU
• Description: MOSFET N-CH 500V TO-220FP-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF5N50TYDTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 640pF @ 25V
• Power - Max: 28W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP5N50 / FDPF5N50 Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Maximum Drain Current
0.01
1.2
1.1
1.0
0.9
0.8
0.1
30
10
-75
1
6
5
4
3
2
1
0
25
1
Operation in This Area
is Limited by R
vs. Temperature
- FDP5N50
-25
vs. Case Temperature
T
50
J
T
V
, Junction Temperature
C
DS
, Case Temperature
, Drain-Source Voltage [V]
10
DS(on)
25
75
75
100
*Notes:
DC
1. T
2. T
3. Single Pulse
10ms
100
[
*Notes:
1ms
o
C
J
C
1. V
2. I
[
= 150
= 25
o
]
125
100
C
D
125
GS
]
= 250
o
μ
C
o
s
= 0V
C
30
μ
A
μ
175
s
800
150
(Continued)
4
Figure 8. On-Resistance Variation
Figure 10. Maximum Safe Operating Area
0.01
3.0
2.5
2.0
1.5
1.0
0.5
0.1
30
10
1
-75
1
Operation in This Area
is Limited by R
vs. Temperature
-25
T
- FDPF5N50
J
V
, Junction Temperature
DS
, Drain-Source Voltage [V]
10
DS(on)
25
*Notes:
1. T
2. T
3. Single Pulse
DC
75
C
J
10ms
= 150
= 25
100
1ms
o
*Notes:
o
C
C
[
1. V
2. I
o
100
125
C
D
]
GS
μ
www.fairchildsemi.com
= 2.5A
s
= 10V
30
μ
s
175
800