QSB34ZR Fairchild Semiconductor, QSB34ZR Datasheet - Page 3

• Manufacturer Part Number: QSB34ZR
• Description: Photodiodes Infrared Photodiode SMD Si Pin
• Manufacturer: Fairchild Semiconductor
• Type: Silicon Infrared PIN Photodioder

Specifications of QSB34ZR

• Photodiode Material: Silicon
• Peak Wavelength: 940 nm
• Half Intensity Angle Degrees: 60 deg
• Maximum Reverse Voltage: 32 V
• Maximum Power Dissipation: 150 mW
• Maximum Light Current: 37 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 50 ns
• Maximum Fall Time: 50 ns
• Package / Case: PLCC-2
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 32V
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 37uA
• Rise Time: 50ns
• Fall Time: 50ns
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: PLCC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor Corporation
QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR Rev. 1.0.3
Typical Performance Curves
1200
1000
800
600
400
200
80
60
40
20
0
0
1.0
0.8
0.6
0.4
0.2
0.1
0
0
Fig. 1 Relative Spectral Sensitivity vs. Wavelength
Ee = 0mV/cm
100
2
Fig. 5 Dark Current vs. Reverse Voltage
300
QSB34GR,
QSB34ZR
Fig. 3 Capacitance vs. Reverse Voltage
4
2
QSB34CGR,
QSB34CZR
6
V
λ – WAVELENGTH (nm)
V
500
R
1
R
- REVERSE VOLTAGE (V)
- REVERSE VOLTAGE (V)
8
700
10
12
Ta = 25°C
900
10
14
f = 1 MHz
H = 0mW/cm
1100
16
18
1300
2
100
20
3
1000
100
10
10
10
10
10
10
1
80
60
40
20
-1
-2
-3
1
0
10
0
20
0
1
V
TA = 25°C
R
Fig. 2 Short Circuit Current vs. Irradiance
= 10V
Fig. 6 Response Time vs. Load Resistance
Fig. 4 Dark Current vs. Temperature
40
10
Ee - IRRADIANCE (mW/cm 2 )
2
0.5
T
LOAD RESISTANCE R
A
-TEMPERATURE (°C)
60
10
3
1.0
V
Ee = 0mV/cm
R
= 10 V
V
λ = 940nm
80
10
L
R
(Ω)
= 5V
4
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2
1.5
100
10
5