BSM15GP120 Infineon Technologies, BSM15GP120 Datasheet - Page 4
BSM15GP120
Manufacturer Part Number
BSM15GP120
Description
IGBT Modules 1200V 15A PIM
Manufacturer
Infineon Technologies
Datasheet
1.BSM15GP120.pdf
(12 pages)
Specifications of BSM15GP120
Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.2 V
Continuous Collector Current At 25 C
15 A
Gate-emitter Leakage Current
300 nA
Power Dissipation
180 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPIM3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM15GP120
Manufacturer:
Infineon Technologies
Quantity:
135
Company:
Part Number:
BSM15GP120
Manufacturer:
EUPEC
Quantity:
25
Company:
Part Number:
BSM15GP120
Manufacturer:
EUPEC
Quantity:
300
Part Number:
BSM15GP120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM15GP120
Quantity:
50
Company:
Part Number:
BSM15GP120 B2
Manufacturer:
EUPEC
Quantity:
228
Company:
Part Number:
BSM15GP120-B2
Manufacturer:
IP
Quantity:
292
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Innere Isolation
internal insulation
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Gewicht
weight
IGBT-Module
IGBT-Modules
Thermische Eigenschaften / Thermal properties
Mechanische Eigenschaften / Mechanical properties
Technische Information / Technical Information
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter
Trans. Bremse/ Trans. Brake
Diode Bremse/ Diode Brake
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter
BSM15GP120
4(11)
Paste
grease
=1W/m*K
=1W/m*K
R
R
T
T
T
M
thCK
G
thJC
stg
op
vj
min.
-40
-40
-
-
-
-
-
-
-
-
-
Al
±10%
typ.
0,08
0,04
0,08
225
180
2
3
-
-
-
-
-
-
-
-
O
3
max.
150
125
125
0,7
1,2
1,2
2,3
1
-
-
-
DB-PIM-10 (2).xls
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
Nm
°C
°C
°C
g