FJX992TF Fairchild Semiconductor, FJX992TF Datasheet

Bipolar Small Signal PNP Epitaxial Silicon Transistor

FJX992TF

Manufacturer Part Number
FJX992TF
Description
Bipolar Small Signal PNP Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FJX992TF

Dc Collector/base Gain Hfe Min
150 to 700
Gain Bandwidth Product Ft
100 MHz
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
SOT-323
Collector- Emitter Voltage Vceo Max
- 120 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 100 mA
Power Dissipation
235 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FJX992 Rev. A0
© 2010 Fairchild Semiconductor Corporation
FJX992
PNP Audio Frequency Low Noise Amplifier
Features
• High Voltage : V
• Excellent h
• High h
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
Thermal Characteristics
operations.
Symbol
Symbol
T
J ,
V
V
V
R
P
CEO
CBO
EBO
I
T
C
θja
D
FE
STG
FE
: h
Linearity
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Junction and Storage Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Ambient
FE
CEO
= 200~700
= -120V
Derate above T
T
Parameter
Parameter
a
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
a
= 25°C
1
1. Base 2. Emitter 3. Collector
-55 to +150
Value
Max.
-120
-120
-100
1.88
235
530
-5
3
1
SOT-323
2
www.fairchildsemi.com
August 2010
mW/°C
Units
Units
°C/W
mW
mA
°C
V
V
V

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FJX992TF Summary of contents

Page 1

... These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol P Total Device Dissipation D R Thermal Resistance, Junction to Ambient θja © 2010 Fairchild Semiconductor Corporation FJX992 Rev 25°C unless otherwise noted a Parameter T = 25°C unless otherwise noted a Parameter Derate above T = 25° ...

Page 2

... Collector-Emitter Saturation Voltage CE V (on) Base-Emitter On Voltage BE SMALL SIGNAL CHARACTERISTICS f Current Gain - Bandwidth Product T C Output Capacitance obo * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% © 2010 Fairchild Semiconductor Corporation FJX992 Rev 25°C unless otherwise noted a Test Condition =-1mA =-100μ ...

Page 3

... 0.1 0 [mA], COLLECTOR CURRENT C Figure 5. Collector-Emitter Cutoff Current 100 125 100 0 0. [V], Collector-Base Voltage CB © 2010 Fairchild Semiconductor Corporation FJX992 Rev. A0 Figure 2. Collector-Emitter Saturation Voltage 0.1 0.01 10 100 100 Figure 6. Base-Emitter Cutoff Current 10000 1000 100 10 0.1 100 125 100 ...

Page 4

... V [V], Collector-Base Voltage CB Figure 9. Forward Bias Safe Operating Area FBSOA 100 Icmax 10 1 0.1 0.1 1 Collector-Emitter Voltage, V © 2010 Fairchild Semiconductor Corporation FJX992 Rev. A0 (Continued) Figure 8. Collector Input Capacitance 100 Figure 10. Transient Thermal Resistance 1 0.1 0.01 1E-3 Vceo(Max) 1E-4 10 100 1E-5 [V] CE ...

Page 5

... Physical Dimensions 1.25±0.10 1.00±0.10 © 2010 Fairchild Semiconductor Corporation FJX992 Rev. A0 SOT-323 2.00±0.20 2.10±0.10 0.95±0.15 0.05 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min. 5 3° 0.90 ±0.10 +0.05 –0.02 1.30±0.10 Dimensions in Millimeters www.fairchildsemi.com ...

Page 6

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS FRFET Auto-SPM Build it Now Global Power Resource CorePLUS Green FPS CorePOWER Green FPS ...

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