PSMN013-30LL,115 NXP Semiconductors, PSMN013-30LL,115 Datasheet - Page 10

• Manufacturer Part Number: PSMN013-30LL,115
• Description: MOSFET N-CH 30V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-30LL,115

• Input Capacitance (ciss) @ Vds: 768pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 12.2nC @ 10V
• Power - Max: 41W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5307-2

NXP Semiconductors
PSMN013-30LL
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
7.5
2.5
10
5
0
charge; typical values
0
6V
24V
5
10
(A)
V
I
S
DS
25
20
15
10
5
0
= 15V
Q
0
All information provided in this document is subject to legal disclaimers.
G
003aae194
(nC)
15
0.3
Rev. 04 — 7 July 2010
T
j
= 150 °C
0.6
N-channel QFN3333 30 V 13 mΩ logic level MOSFET
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
0.9
3
2
10
as a function of drain-source voltage; typical
values
T
j
-1
= 25 °C
V
003aae195
SD
(V)
1.2
1
PSMN013-30LL
10
C
C
C
V
© NXP B.V. 2010. All rights reserved.
iss
oss
rss
DS
003aae191
(V)
10
2
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