PSMN013-30LL,115 NXP Semiconductors, PSMN013-30LL,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN013-30LL,115
• Description: MOSFET N-CH 30V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-30LL,115

• Input Capacitance (ciss) @ Vds: 768pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 12.2nC @ 10V
• Power - Max: 41W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5307-2

NXP Semiconductors
PSMN013-30LL
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
10
(A)
10
10
I
D
10
50
40
30
20
10
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
(1)
100
Limit R
150
All information provided in this document is subject to legal disclaimers.
T
DSon
003aae184
mb
1
(°C)
= V
200
DS
/ I
Rev. 04 — 7 July 2010
D
DC
N-channel QFN3333 30 V 13 mΩ logic level MOSFET
Fig 2.
P
(%)
der
120
80
40
0
function of solder point temperature
Normalized total power dissipation as a
0
10
50
PSMN013-30LL
100
V
DS
t
100 μ s
1 ms
10 ms
100 ms
(V)
p
=10 μ s
150
© NXP B.V. 2010. All rights reserved.
T
003aae404
003aab937
mb
(°C)
10
200
2
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