PSMN013-30LL,115 NXP Semiconductors, PSMN013-30LL,115 Datasheet - Page 3

• Manufacturer Part Number: PSMN013-30LL,115
• Description: MOSFET N-CH 30V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-30LL,115

• Input Capacitance (ciss) @ Vds: 768pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 12.2nC @ 10V
• Power - Max: 41W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5307-2

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN013-30LL
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
All information provided in this document is subject to legal disclaimers.
Conditions
T
T
V
V
pulsed; t
see
T
T
pulsed; t
V
V
j
j
mb
mb
GS
GS
GS
sup
Rev. 04 — 7 July 2010
≥ 25 °C; T
≤ 150 °C; T
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; unclamped; R
p
p
≤ 10 µs; T
≤ 10 µs; T
N-channel QFN3333 30 V 13 mΩ logic level MOSFET
j
≤ 150 °C
j
mb
mb
j(init)
≥ 25 °C; R
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
mb
mb
= 25 °C;
= 25 °C
GS
GS
D
= 20 kΩ
= 40 A;
= 50 Ω
Figure 1
Figure 1
PSMN013-30LL
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
© NXP B.V. 2010. All rights reserved.
150
150
260
Max
30
30
20
21
21
169
41
42
169
13
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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