PSMN013-30LL,115 NXP Semiconductors, PSMN013-30LL,115 Datasheet - Page 5

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PSMN013-30LL,115

Manufacturer Part Number
PSMN013-30LL,115
Description
MOSFET N-CH 30V QFN3333
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN013-30LL,115

Input Capacitance (ciss) @ Vds
768pF @ 15V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
12.2nC @ 10V
Power - Max
41W
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
13 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
41 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5307-2
NXP Semiconductors
5. Thermal characteristics
Table 5.
[1]
PSMN013-30LL
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
R
temperature. In practice R
th(j-a)
10
10
10
-1
-2
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
is guaranteed by design and assumes that the device is mounted on a 40mm x 40mm x 70µm copper pad at 20°C ambient
-6
Thermal characteristics
0.02
δ = 0.5
0.2
0.1
0.05
single shot
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
10
th(j-a)
-5
will be determined by the customer’s PCB characteristics
Conditions
see
All information provided in this document is subject to legal disclaimers.
10
-4
Figure 4
Rev. 04 — 7 July 2010
10
-3
N-channel QFN3333 30 V 13 mΩ logic level MOSFET
10
-2
[1]
PSMN013-30LL
Min
-
-
10
P
-1
t
Typ
2.8
56
p
t
p
T
(s)
© NXP B.V. 2010. All rights reserved.
003aae186
δ =
Max
6.6
60
t
T
p
t
1
Unit
K/W
K/W
5 of 15

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