PSMN013-30LL,115 NXP Semiconductors, PSMN013-30LL,115 Datasheet - Page 6

• Manufacturer Part Number: PSMN013-30LL,115
• Description: MOSFET N-CH 30V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-30LL,115

• Input Capacitance (ciss) @ Vds: 768pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 12.2nC @ 10V
• Power - Max: 41W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5307-2

NXP Semiconductors
6. Characteristics
Table 6.
PSMN013-30LL
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
DSS
GSS
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance
(AC)
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
V
see
f = 1 MHz
I
see
I
see
I
I
see
I
see
I
see
V
T
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
GS
DS
= 25 °C; see
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 8 A; V
= 8 A; V
= 0 A; V
= 8 A; V
= 8 A; V
= 8 A; V
Figure 10
Figure
Figure 10
Figure 12
Figure 13
Figure 13
Figure 12
Figure
Figure
Figure 14
Figure
Figure 15
= 30 V; V
= 30 V; V
= 15 V; V
= 20 V; V
= -20 V; V
= 4.5 V; I
= 10 V; I
= 10 V; I
= 10 V; I
Rev. 04 — 7 July 2010
DS
DS
DS
DS
DS
DS
11; see
14; see
14; see
14; see
DS
DS
DS
D
D
D
D
= 15 V; V
= 15 V; V
= 0 V; V
= 15 V; V
= 15 V; V
= 15 V; see
GS
GS
GS
DS
DS
= 5 A; T
= 5 A; T
= 5 A; T
= V
= V
= V
= 5 A; T
Figure 16
GS
GS
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 10
Figure 15
Figure 15
Figure 15
N-channel QFN3333 30 V 13 mΩ logic level MOSFET
; T
; T
; T
GS
j
j
j
GS
GS
GS
GS
j
= 100 °C;
= 150 °C;
= 25 °C;
j
j
j
= 25 °C;
= 10 V
j
j
j
= 150 °C;
= 25 °C;
= -55 °C;
j
Figure
= 25 °C
= 125 °C
= 25 °C
= 10 V;
= 4.5 V;
= 10 V;
= 10 V;
= 25 °C
j
j
= -55 °C
= 25 °C
14;
PSMN013-30LL
Min
27
30
0.5
1.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.7
-
0.02
-
5
5
15.5
-
19.8
11
1.37
12.2
6
11.4
2.3
1.3
1
1.7
2.7
768
144
67
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
2.15
2.55
1
50
100
100
19
17.9
23.4
13
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
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